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AMD Boasts New Memory Cell and Transistor Technology

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Posted by: TotalRecall

AMD has a press release announcing the presentation of new transitor and memory cell technology at this year's International Electron Devices Meeting:

At IEDM, AMD will present three technical papers outlining recent achievements in their ongoing research on future transistor structures. The primary working parts of a microchip, transistors are basically a microscopic switch that uses a “gate” to turn the flow of electrical current on and off.

AMD will provide details on research conducted with University of California, Berkley on a new transistor device type that could replace today’s planar transistors as the industry standard for high-performance logic chips.

Known in the microchip industry as a Fin Field Effect Transistor (FinFET), this new structure uses a single vertical silicon "fin" to create two gates instead of one. This effectively doubles the electrical current that can be sent through the transistor and improves the transistor’s switching characteristics. This efficient and practical design enables enhanced performance and ever-shrinking geometries, while retaining a high degree of manufacturability using existing methods.


View the whole release here.



 
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